Nonvolatile memory device having a ferroelectric layer

A nonvolatile memory device comprising:

• a substrate having an upper surface;
• a plurality of global source lines disposed over the substrate, the plurality of global source lines being disposed to be spaced apart from each other along a first direction perpendicular to the upper surface, wherein each of the plurality of global source lines comprises a source electrode layer pattern extending along a second direction perpendicular to the first direction;
• a channel structure disposed to contact the plurality of global source lines in a third direction perpendicular to the first and second directions, over the substrate;
• a plurality of global drain lines disposed to contact one sidewall of the channel structure in the third direction over the substrate, the plurality of global drain lines being disposed to be spaced apart from each other along the first direction, wherein each of the plurality of global drain lines comprises a drain electrode pattern extending along the second direction;
• a plurality of gate electrode structures extending in the first direction in the channel structure and disposed to be spaced apart from each other along the second direction;
• a plurality of ferroelectric structures extending in the first direction in the channel structure, each of the plurality of ferroelectric structures disposed to surround a gate electrode structure;
• and
• a plurality of interfacial insulation structures extending in the first direction in the channel structure, each of the plurality of interfacial insulation structures disposed to surround a ferroelectric structure.