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US 2021/0175239 A1Published application
Ferroelectric Capacitor, A Ferroelectric Memory Cell, An Array Of Ferroelectric Memory Cells, And A Method Of Forming A Ferroelectric Capacitor
AssigneeMicron Technology, Inc.
InventorsClement Jacob, Vassil N. Antonov, Jaydeb Goswami, Albert Liao, Christopher W. Petz, Durai Vishak Nirmal Ramaswamy
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Abstract
A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb. Other aspects, including method, are disclosed.
Claims18
1-22. (canceled)
A method of forming a ferroelectric capacitor, comprising:
- forming two conductive capacitor electrodes having ferroelectric material there-between, the forming of at least one of the capacitor electrodes sequentially comprising:
- (a) forming a metal oxide on a substrate, the metal of the metal oxide comprising at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb;
- (b) contacting the metal oxide with a metal-organic precursor to form a first solid reaction product on the substrate comprising the metal-organic precursor bonded to the metal oxide;
- (c) contacting the first solid reaction product with an oxygen-containing precursor to form a second non-solid and non-liquid reaction product and remaining metal oxide on the substrate that is stoichiometrically metal-rich;
- and
- (d) contacting the stoichiometrically metal-rich remaining metal oxide with a silane to form the at least one capacitor electrode to comprise MxSiOy, where “M” is the at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb.
3 more elements
24-36. (canceled)
A method of forming a ferroelectric capacitor, comprising:
- forming two conductive capacitor electrodes having ferroelectric material there-between, the forming of at least one of the capacitor electrodes sequentially comprising:
- (a) forming a metal oxide on a substrate, the metal of the metal oxide comprising at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb;
- (b) contacting the metal oxide with a metal-organic precursor to form a first solid reaction product on the substrate comprising the metal-organic precursor bonded to the metal oxide, carbon of the metal-organic precursor being bonded to oxygen of the metal oxide;
- (c) contacting the first solid reaction product with an oxygen-containing precursor to form a second non-solid and non-liquid reaction product and remaining metal oxide on the substrate that is stoichiometrically metal-rich, the second non-solid and non-liquid reaction product comprising CO2 formed from the bonded-carbon of the first solid reaction product, the bonded-oxygen of the first solid reaction product, and oxygen from the oxygen-containing precursor;
- and
- (d) contacting the stoichiometrically metal-rich remaining metal oxide with a silane to form the at least one capacitor electrode to comprise MxSiOy, where “M” is the at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb.
3 more elements
A method of forming a ferroelectric capacitor, comprising:
- forming two conductive capacitor electrodes having ferroelectric material there-between, the forming of at least one of the capacitor electrodes sequentially comprising:
- (a) forming an elemental metal or a metal alloy on a substrate, the elemental metal or metal alloy comprising at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb;
- (b) oxidizing the elemental metal or metal alloy to form a metal oxide on the substrate that is stoichiometrically metal-rich;
- and
- (c) contacting the stoichiometrically metal-rich remaining metal oxide with a silane to form the at least one capacitor electrode to comprise MxSiOy, where “M” is the at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb.
2 more elements
Dependencies are inferred from the claim text.