Back to results
US 2021/0175236 A1Published application
Semiconductor device and method for fabricating the same
AssigneeNanya Technology Corporation
InventorSHING-YIH SHIH
Life of this patent
Estimating the term…
Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate including a center area and a peripheral area surrounding the center area, a first gate stack positioned on the peripheral area of the substrate, and an active column positioned in the center area of the substrate. A top surface of the first gate stack and a top surface of the active column are at a same vertical level.
Claims20
A semiconductor device, comprising:
- a substrate including a center area and a peripheral area surrounding the center area;
- a first gate stack positioned on the peripheral area of the substrate;
- and
- an active column positioned in the center area of the substrate;
- wherein a top surface of the first gate stack and a top surface of the active column are at a same vertical level.
2 more elements
A method for fabricating a semiconductor device, comprising:
- providing a substrate comprising a center area and a peripheral area surrounding the center area;
- forming a first gate stack on the peripheral area and having a top surface;
- and
- forming an active column in the center area and having a top surface at a same vertical level as the top surface of the first gate stack.
1 more element
Dependencies are inferred from the claim text.