Memory device and method of operating the same

Abstract

The present disclosure relates to an electronic device and a method of operating a memory device having a reduced program operation time including pre-charging a select line connected to the select transistor to a first select voltage during a first time period, discharging the select line during a second time period subsequent to the first time period, and discharging the select line while word lines connected to the plurality of memory cells are pre-charged to an operation voltage in a third time period subsequent to the second time period to change a level of the first select voltage pre-charged to the select line to a second select voltage.

Dependencies are inferred from the claim text.