Photodetection element and lidar device

A lidar device comprising:

• a light emitting unit including a light source configured to output light;
• a light receiving unit including a photodetection element configured to receive light coming in a predetermined direction;
• and
• a scanning unit including a reflective surface for reflecting light incident from the light emitting unit and configured to, by rotating the reflective surface about a predefined rotation axis, change an emission direction of light incident from the light emitting unit along a main scanning direction orthogonal to an axis direction of the rotation axis, and reflect and guide light reflected from a subject within a scan range to the light receiving unit,
• wherein
• the photodetection element includes
• at least one pixel region formed in a semiconductor substrate and configured to internally generate an electron and a hole in accordance with incident light,
• a first absorption region formed in the pixel region and configured to absorb a first discharge carrier, the first discharge carrier being either of the electron and the hole generated in the pixel region,
• a first discharge electrode formed on the semiconductor substrate and configured to discharge, from the first absorption region, the first discharge carrier absorbed in the first absorption region;
• a pixel neighboring region formed so as to be adjacent to the pixel region in the semiconductor substrate and configured to internally generate an electron and a hole in accordance with incident light,
• a second absorption region formed in the pixel neighboring region and configured to absorb a second discharge carrier, the second discharge carrier being a carrier that is either of the electron and the hole generated in the pixel neighboring region and equal to the first discharge carrier, and
• a second discharge electrode formed on the semiconductor substrate and configured to discharge, from the second absorption region, the second discharge carrier absorbed in the second absorption region.

A photodetection element comprising:

• at least one pixel region formed in a semiconductor substrate and configured to internally generate an electron and a hole in accordance with incident light;
• an absorption region formed in the pixel region and configured to absorb a discharge carrier, the discharge carrier being either of the electron and the hole generated in the pixel region;
• a discharge electrode formed on the semiconductor substrate and configured to discharge, from the absorption region, the discharge carrier absorbed in the absorption region;
• a pixel neighboring region formed so as to be adjacent to the pixel region in the semiconductor substrate and configured to internally generate an electron and a hole in accordance with incident light;
• and
• a light shield formed from a member capable of blocking light with a wavelength allowing generation of the electron and the hole in the pixel neighboring region, the light shield being placed so as to cover the pixel neighboring region.

A lidar device comprising:

• a light emitting unit including a light source configured to output light;
• a light receiving unit including a photodetection element configured to receive light coming in a predetermined direction;
• and
• a scanning unit including a reflective surface for reflecting light incident from the light emitting unit and configured to, by rotating the reflective surface about a predefined rotation axis, change an emission direction of light incident from the light emitting unit along a main scanning direction orthogonal to an axis direction of the rotation axis, and reflect and guide light reflected from a subject within a scan range to the light receiving unit,
• wherein
• the photodetection element includes
• at least one pixel region formed in a semiconductor substrate and configured to internally generate an electron and a hole in accordance with incident light,
• an absorption region formed in the pixel region and configured to absorb a discharge carrier, the discharge carrier being either of the electron and the hole generated in the pixel region,
• a discharge electrode formed on the semiconductor substrate and configured to discharge, from the absorption region, the discharge carrier absorbed in the absorption region,
• a pixel neighboring region formed so as to be adjacent to the pixel region in the semiconductor substrate and configured to internally generate an electron and a hole in accordance with incident light, and
• a light shield formed from a member capable of blocking light with a wavelength allowing generation of the electron and the hole in the pixel neighboring region, the light shield being placed so as to cover the pixel neighboring region.