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US 2021/0172065 A1Published application
Transition-metal chalcogenide thin film and preparing method of the same
AssigneeResearch & Business Foundation Sungkyunkwan University
InventorsChanggu LEE, Hyonggoo YOO
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Abstract
A method of manufacturing transition metal chalcogenide thin films, includes the operations of forming a transition metal chalcogenides precursor on a substrate, and irradiating light onto the transition metal chalcogenides precursor. The transition metal chalcogenides precursor includes an amine-based ligand.
Claims13
A method of manufacturing transition metal chalcogenide thin films, comprising operations of:
- forming a transition metal chalcogenides precursor on a substrate;
- and
- irradiating light onto the transition metal chalcogenides precursor,
- wherein the transition metal chalcogenides precursor includes an amine-based ligand.
1 more element
Dependencies are inferred from the claim text.