Method for depositing large-area graphene layer and apparatus for continuous graphene deposition

An apparatus for continuous graphene deposition, the apparatus comprising:

• a sputtering unit and an injector, the sputtering unit configured to form a titanium layer by depositing the titanium layer onto a surface of a substrate, the injector configured to grow graphene on the titanium layer,
• wherein the injector comprises:
• a reductant supply unit configured to supply a reductant gas to the substrate, the reductant gas containing a hydrogen gas (H2);
• a reactant supply unit configured to supply a reactant gas to the substrate, the reactant gas containing a graphene source;
• a purge supply unit arranged between the reductant supply unit and the reactant supply unit, the purge supply unit configured to supply a purge gas to the substrate;
• and
• an exhaust unit configured to exhaust gases from the substrate,
• and wherein the injector is configured to spray the reductant gas and the purge gas onto the titanium layer while moving in a first direction in relation to the substrate, and
• wherein the injector is configured to spray the reactant gas and the purge gas onto the titanium layer while moving in a second direction opposite to the first direction.