Polishing composition
AssigneeNitta Dupont Incorporated
InventorShuhei MATSUDA
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Abstract
A polishing composition is provided that is capable of quickly removing oxide film even with lower abrasive concentration. A polishing composition includes: silica with a silanol group density of 2.0 OH/nm2 or higher; and an organic silicon compound having, at a terminal, an amino group, methylamino group, dimethylamino group or quaternary ammonium group, the organic silicon compound having two or more alkoxyl groups or hydroxyl groups bonded to an Si atom thereof. However, the quaternary ammonium group of the organic silicon compound does not have an alkyl group with a carbon number of two or more.
Claims10
A polishing composition, comprising:
- silica with a silanol group density of 2.0 OH/nm2 or higher;
- and
- an organic silicon compound having, at a terminal, an amino group, methylamino group, dimethylamino group or quaternary ammonium group,
- the organic silicon compound having two or more alkoxyl groups or hydroxyl groups bonded to an Si atom thereof,
- wherein the quaternary ammonium group of the organic silicon compound does not have an alkyl group with a carbon number of two or more.
Dependencies are inferred from the claim text.