Transistor level input and output harmonic terminations
AssigneeCree, Inc.
InventorsFrank Trang, Zulhazmi Mokhti, Guillaume Bigny
Life of this patent
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Abstract
A transistor device includes a transistor cell comprising a channel region, a gate runner that is electrically connected to a gate electrode on the channel region and physically separated from the gate electrode, and a harmonic termination circuit electrically connected to the gate runner between the gate electrode and an input terminal of the transistor device, the harmonic termination circuit configured to terminate signals at a harmonic frequency of a fundamental operating frequency of the transistor device.
Claims20
A transistor device, comprising:
- a semiconductor substrate;
- a transistor cell on the semiconductor substrate, the transistor cell comprising a drain finger;
- a drain runner that is electrically connected to the drain finger;
- and
- a harmonic termination circuit electrically connected to the drain runner between the drain finger and an output terminal of the transistor device, the harmonic termination circuit configured to terminate signals at a harmonic frequency of a fundamental operating frequency of the transistor device,
- wherein the harmonic termination circuit and the drain runner extend on the semiconductor substrate.
A transistor device, comprising:
- a semiconductor substrate;
- a plurality of source regions and a plurality of drain regions alternately arranged on the semiconductor substrate;
- and
- a harmonic termination circuit on the semiconductor substrate, wherein the harmonic termination circuit is electrically connected between a drain finger on the drain region and an output of the transistor device,
- wherein the harmonic termination circuit comprises a capacitive element on the semiconductor substrate.
A transistor device, comprising:
- a substrate;
- a semiconductor structure on the substrate, the semiconductor structure comprising at least one transistor cell;
- and
- a harmonic termination circuit electrically connected to the at least one transistor cell, the harmonic termination circuit configured to terminate signals at a harmonic frequency of a fundamental operating frequency of the transistor device,
- wherein the harmonic termination circuit is on an upper surface of the semiconductor structure.
Dependencies are inferred from the claim text.