Semiconductor storage device

A semiconductor storage device comprising:

• a control circuit;
• a first wiring extending in a first direction;
• a second wiring and a third wiring, each extending in the first direction and being adjacent to the first wiring in a second direction intersecting the first direction;
• a fourth wiring extending in the second direction;
• a fifth wiring and a sixth wiring, each extending in the second direction and being adjacent to the fourth wiring in the first direction;
• a plurality of memory cells each having one end connected to one of the first to third wirings and the other end connected to one of the fourth to sixth wirings;
• a voltage output circuit configured to output a first voltage, a second voltage higher than the first voltage, a third voltage higher than the first voltage, a fourth voltage higher than the second voltage and the third voltage, and a fifth voltage higher than the fourth voltage;
• and
• a voltage transfer circuit connected to the first to sixth wirings and the voltage output circuit,
• wherein, at a predetermined timing of a write operation for memory cells connected to the first wiring and the fourth wiring, the control circuit is configured to:
• transfer the first voltage to the first wiring;
• transfer the fourth voltage to the second wiring;
• transfer the second voltage to the third wiring;
• transfer the fifth voltage to the fourth wiring;
• transfer the third voltage to the fifth wiring;
• and
• transfer the third voltage to the sixth wiring.