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US 2021/0083181 A1Published application
Memory device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Sheng CHEN, Da-Ching CHIOU, Jau-Yi WU, Carlos H. DIAZ
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Abstract
A memory device includes a conductive wire, a first 2-D material layer, a phase change element, and a top electrode. The first 2-D material layer is over the conductive wire. The phase change element extends along a surface of the first 2-D material layer distal to the conductive layer. The top electrode is over the phase change element.
Claims20
A memory device, comprising:
- a conductive wire;
- a first 2-D material layer over the conductive wire;
- a phase change element spaced from the conductive wire at least in part by the first 2-D material layer;
- and
- a top electrode over the phase change element.
2 more elements
A memory device, comprising:
- a conductive wire;
- a phase change element over the conductive wire;
- a first 2-D material layer over the phase change element;
- and
- a top electrode spaced from the phase change element at least in part by the first 2-D material layer.
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A method, comprising:
- depositing a dielectric layer over a conductive wire;
- etching the dielectric layer to form an opening in the dielectric layer;
- forming a first 2-D material layer in the opening in the dielectric layer;
- after forming the first 2-D material layer in the opening in the dielectric layer, depositing a phase change material layer to fill the opening in the dielectric layer;
- depositing a top electrode layer over the phase change material layer;
- and
- patterning the phase change material layer and the top electrode layer.
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Dependencies are inferred from the claim text.