Magnetic tunnel junction device and formation method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChern-Yow HSU
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Abstract
A method of forming a magnetic tunnel junction (MTJ) device includes forming MTJ layers over a dielectric layer; performing a first etching operation on the MTJ layers to form MTJ stacks, in which the first etching operation is performed such that a metal-containing doped region is formed in the dielectric layer and between the MTJ stacks; and performing a second etching operation to break through the metal-containing doped region.
Claims20
A method of forming a magnetic tunnel junction (MTJ) device, the method comprising:
- forming MTJ layers over a dielectric layer;
- performing a first etching operation on the MTJ layers to form MTJ stacks, wherein the first etching operation is performed such that a metal-containing doped region is formed in the dielectric layer and between the MTJ stacks;
- and
- performing a second etching operation to break through the metal-containing doped region.
A method of forming a magnetic tunnel junction (MTJ) device, the method comprising:
- forming a bottom electrode layer over a dielectric layer;
- forming MTJ layers over the bottom electrode layer;
- forming a top electrode over the MTJ layers;
- patterning the MTJ layers and the bottom electrode layer to form an MTJ stack and a bottom electrode under the MTJ stack;
- forming a spacer that laterally surrounds the bottom electrode, the MTJ stack, and the top electrode;
- and
- after forming the spacer, etching an exposed region of the dielectric layer that is not covered by the spacer.
A magnetic tunnel junction (MTJ) device, comprising:
- a bottom electrode via extending through a dielectric layer;
- a MTJ stack over the bottom electrode, comprising:
- a ferromagnetic pinned layer;
- a tunneling layer over the ferromagnetic pinned layer;
- and
- a ferromagnetic free layer over the tunneling layer;
- a spacer laterally surrounding the MTJ stack;
- and
- a metal-containing doped region in the dielectric layer and under the spacer.
Dependencies are inferred from the claim text.