Semiconductor Device and Method for Producing a Carrier Element Suitable for a Semiconductor Device

A semiconductor device comprising:

• a carrier element comprising:
• a carrier layer comprising:
• a first depression extending from a first main surface of the carrier layer in a direction of a second main surface of the carrier layer opposite the first main surface;
• and
• a metal substrate and an electrically insulating layer on at least a portion of the metal substrate;
• a first electrically conductive filling component arranged in the first depression in a form-fitting manner, the electrically insulating layer being arranged between the metal substrate and the first filling component;
• and
• a semiconductor chip arranged on the carrier element, wherein the electrically insulating layer is an anodization layer.

A method for producing a carrier element suitable for a semiconductor device, the method comprising:

• providing a metal substrate;
• producing a first depression in the metal substrate;
• producing an electrically insulating layer on at least a portion of the metal substrate;
• and
• at least partly electrodepositing a first electrically conductive filling component in the first depression in a form-fitting manner,
• wherein the electrically insulating layer is arranged between the metal substrate and the first filling component, and
• wherein the electrically insulating layer is produced by anodizing at least a portion of the metal substrate.