Nitride-based light-emitting diode device

A nitride-based light-emitting diode (LED) device, comprising:

• an n-type nitride semiconductor layer;
• an active layer disposed on said n-type nitride semiconductor layer;
• a p-type nitride semiconductor layer disposed on said active layer opposite to said n-type nitride semiconductor layer;
• and
• a defect control unit disposed between said n-type nitride semiconductor layer and said active layer, and including a first defect control layer, a second defect control layer and a third defect control layer that are sequentially disposed on said active layer in such order, and that have different doping concentrations,
• wherein said third defect control layer includes one of Al-containing ternary nitride, Al-containing quaternary nitride, and a combination thereof.