Optoelectronic Sensor and Manufacturing Method Thereof, and Optoelectronic Device and Manufacturing Method Thereof

A manufacturing method for an optoelectronic sensor, comprising:

• forming a first electrode;
• forming a first semiconductor layer on a surface of the first electrode, wherein the first electrode has a work function greater than that of the first semiconductor layer;
• forming a second semiconductor layer on a surface of the first semiconductor layer away from the first electrode, wherein each of the first semiconductor layer and the second semiconductor layer is a metal oxide semiconductor layer, and the first semiconductor layer has a conductivity smaller than that of the second semiconductor layer, and has a work function greater than that of the second semiconductor layer;
• and
• forming a second electrode on a surface of the second semiconductor layer away from the first semiconductor layer.

A manufacturing method for an optoelectronic device, comprising:

• providing a substrate;
• forming a thin film transistor on a surface of the substrate;
• forming an optoelectronic sensor on a surface of the thin film transistor away from the substrate, wherein a second electrode of the optoelectronic sensor is electrically coupled to a source or a drain of the thin film transistor;
• wherein forming the optoelectronic sensor on the surface of the thin film transistor away from the substrate comprising:
• forming a first electrode;
• forming a first semiconductor layer on a surface of the first electrode, the first electrode has a work function greater than that of the first semiconductor layer;
• forming a second semiconductor layer on a surface of the first semiconductor layer away from the first electrode, each of the first semiconductor layer and the second semiconductor layer is a metal oxide semiconductor layer, and the first semiconductor layer has a conductivity smaller than that of the second semiconductor layer, and has a work function greater than that of the second semiconductor layer;
• and
• forming a second electrode on a surface of the second semiconductor layer away from the first semiconductor layer.