Electronic device and method of manufacturing the same

A method of manufacturing an electronic device, the method comprising:

• preparing a substrate on which a channel element is provided;
• forming, on the substrate, a crystallization prevention layer that includes an amorphous dielectric material;
• forming an amorphous dielectric material layer on the crystallization prevention layer;
• forming a gate electrode on the amorphous dielectric material layer;
• and
• forming a ferroelectric crystallization layer having ferroelectricity or anti-ferroelectricity by crystallizing at least a portion of the amorphous dielectric material layer through an annealing process,
• the crystallization prevention layer being configured to prevent crystallization in the ferroelectric crystallization layer from spreading toward the substrate.

An electronic device comprising:

• a channel element including an intermediate region between a first side and a second side;
• a gate electrode on the intermediate region of the channel element;
• a ferroelectric crystallization layer between the gate electrode and the channel element, the ferroelectric crystallization layer being at least partially crystallized and including a dielectric material having ferroelectricity or anti-ferroelectricity;
• and
• a crystallization prevention layer between the ferroelectric crystallization layer and the channel element,
• the crystallization prevention layer including an amorphous dielectric material and being configured to prevent crystallization in the ferroelectric crystallization layer from spreading toward the channel element.