Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator

A semiconductor device comprising:

• a silicon carbide layer having a first plane parallel to a first direction and a second direction orthogonal to the first direction, and a second plane facing the first plane, the silicon carbide layer including
• a first trench located on a side of the first plane, the first trench extending in the first direction,
• a first silicon carbide region of n-type,
• a second silicon carbide region of p-type located between the first silicon carbide region and the first plane,
• a third silicon carbide region of n-type located between the second silicon carbide region and the first plane,
• a fourth silicon carbide region of p-type located between the first silicon carbide region and the first trench, the fourth silicon carbide region having a p-type impurity concentration higher than a p-type impurity concentration of the second silicon carbide region,
• a fifth silicon carbide region of p-type located between the first silicon carbide region and the first plane, the fifth silicon carbide region having a distance from the second plane smaller than a distance between the second plane and the first trench, and the fifth silicon carbide region having a p-type impurity concentration higher than the p-type impurity concentration of the second silicon carbide region, and
• a sixth silicon carbide region of n-type located between the fourth silicon carbide region and the fifth silicon carbide region, the first silicon carbide region being interposed between the sixth silicon carbide region the fourth silicon carbide region, and the sixth silicon carbide region having an n-type impurity concentration higher than an n-type impurity concentration of the first silicon carbide region;
• a gate electrode located in the first trench;
• a gate insulating layer located between the gate electrode and the silicon carbide layer;
• a first electrode located on the side of the first plane of the silicon carbide layer;
• and
• a second electrode located on a side of the second plane of the silicon carbide layer.