High electron mobility transistor
AssigneeUnited Microelectronics Corp.
InventorsAn-Chi Liu, Chun-Hsien Lin
Life of this patent
Estimating the term…
Abstract
A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, a barrier layer on the buffer layer, a gate electrode on the barrier layer, a first passivation layer adjacent to two sides of the gate electrode, and a p-type semiconductor layer between the gate electrode and the barrier layer. Preferably, a corner of the p-type semiconductor layer contacting a sidewall of the first passivation layer includes a first curve, and a bottom surface of the p-type semiconductor layer directly on the first passivation layer includes a second curve.
Claims20
A high electron mobility transistor (HEMT), comprising:
- a buffer layer on a substrate;
- a barrier layer on the buffer layer;
- a gate electrode on the barrier layer;
- a first passivation layer adjacent to two sides of the gate electrode;
- and
- a p-type semiconductor layer between the gate electrode and the barrier layer, wherein a corner of the p-type semiconductor layer contacting a sidewall of the first passivation layer comprises a first curve.
A high electron mobility transistor (HEMT), comprising:
- a buffer layer on a substrate;
- a barrier layer on the buffer layer;
- a gate electrode on the barrier layer;
- a first passivation layer adjacent to two sides of the gate electrode;
- and
- a p-type semiconductor layer between the gate electrode and the barrier layer, wherein a corner of the p-type semiconductor layer directly on top of the first passivation layer comprises a curve.
Dependencies are inferred from the claim text.