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US 2021/0083045 A1Published application
Electronic power device with super-junction
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsJulien BUCKLEY, Jérôme BISCARRAT
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Abstract
An integrated electronic device includes a first terminal and a second terminal, a Schottky diode having a first threshold voltage and coupled between the first terminal and the second terminal, a derivation component having a second threshold voltage greater than the first threshold voltage and coupled between the first terminal and the second terminal. The derivation component comprises a super-junction.
Claims14
An integrated electronic device comprising:
- a Schottky diode comprising an anode and a cathode mutually coupled by a two-dimensional electron gas and having a first threshold voltage,
- a derivation component having a second threshold voltage greater than the first threshold voltage and coupled in parallel with the Schottky diode,
- wherein the derivation component is a lateral super-junction transistor comprising an insulated vertical gate, a source electrically connected to the anode of the Schottky diode and a drain electrically connected to the cathode of the Schottky diode, the insulated vertical gate and the source being mutually electrically coupled so as to be at the same electrical potential.
A method for manufacturing an integrated electronic device comprising:
- forming a Schottky diode comprising an anode and a cathode mutually coupled by a two-dimensional electron gas, the Schottky diode having a first threshold voltage;
- forming a derivation component having a second threshold voltage greater than the first threshold voltage, the derivation component being a lateral super-junction transistor comprising an insulated vertical gate, a source and a drain, the insulated vertical gate and the source being mutually electrically coupled so as to be at the same electrical potential, and
- carrying out a parallel coupling of the derivation component and the Schottky diode, the source of the transistor being electrically connected to the anode of the Schottky diode and the drain of the transistor being electrically connected to the cathode of the Schottky diode.
Dependencies are inferred from the claim text.