Semiconductor structure and manufacturing method for the same

A method for fabricating a semiconductor structure, comprising:

• forming a first passivation layer;
• forming a bottom terminal over the first passivation layer;
• forming a first middle terminal over the bottom terminal;
• forming a top terminal over the first middle terminal;
• forming a second passivation layer over the top terminal;
• forming a first etch stop layer over the second passivation layer;
• forming a third passivation layer over the first etch stop layer;
• forming a recess penetrating the first, second, and third passivation layer;
• removing a portion of the third passivation layer adjacent to a sidewall of the recess to expose a portion of a top surface of the second passivation layer;
• and
• forming a conductive material to penetrate the first, second, and third passivation layer.

A method for fabricating a semiconductor structure, comprising:

• forming a first passivation layer;
• forming a capacitor stack over the first passivation layer;
• forming a second passivation layer over the capacitor stack;
• forming a recess penetrating the first and the second passivation layer;
• forming a sacrificial layer over the second passivation layer;
• forming an opening in the sacrificial layer, wherein the opening is aligned with the recess;
• forming a conductive via in the recess;
• and
• forming a conductive post in the opening.