Semiconductor storage device

A semiconductor storage device comprising:

• a first wiring extending in a first direction;
• a second wiring extending in a second direction intersecting the first direction and provided at a position different from the first wiring in a third direction, the third direction intersecting the first direction and the second direction;
• a first insulating film provided between the first wiring and the second wiring in the third direction;
• a first variable resistance film provided between the first wiring and the second wiring in the third direction, and adjacent to the first insulating film in the first direction;
• a third wiring adjacent to the second wiring in the first direction and extending in the second direction;
• a second insulating film provided between the first wiring and the third wiring in the third direction;
• a second variable resistance film provided between the first wiring and the third wiring in the third direction, and adjacent to the second insulating film in the first direction;
• and
• an insulating portion that includes a portion provided between the first wiring and the second wiring in the third direction, and is provided between the first insulating film and the second insulating film in the first direction.