Nonvolatile memory device

A nonvolatile memory device, comprising:

• a first wiring extending in a first direction;
• a second wiring extending in a second direction that intersects with the first direction;
• a third wiring extending in the second direction and spaced from the second wiring in the first direction;
• an insulating layer including a first portion between the second wiring and the third wiring in the first direction and a second portion protruding from the first portion in a third direction beyond ends of the second and third wirings in the third direction, the third direction intersecting with the first and second directions;
• and
• a chalcogenide layer between the first wiring and the second wiring, between first wiring and the third wiring, and between the first wiring and insulating layer, wherein
• the chalcogenide layer includes a first layer portion between the first wiring and the second wiring, a second layer portion between the first wiring and the third wiring, and a third layer portion between the first wiring and the insulating layer, concentration of a first element in the third layer portion being higher than a concentration of the first element in the first layer portion and a concentration of the first element in the second layer portion.