Imaging element, laminated imaging element, and solid-state imaging device

A solid-state imaging device comprising a pixel including:

• a first imaging element;
• a second imaging element;
• a third imaging element;
• and
• an on-chip micro lens, wherein
• each of a distance d1 between a center of an inscribed circle of a charge accumulation electrode and a center of the on-chip micro lens, a distance d2 between a center of an inscribed circle of the second imaging element and the center of the on-chip micro lens, and a distance d3 between a center of an inscribed circle of the third imaging element and the center of the on-chip micro lens is shorter than a distance d4 between a center of an inscribed circle of a first electrode and the center of the on-chip micro lens or a distance d5 between a center of an inscribed circle of a floating diffusion region and the center of the on-chip micro lens.

A solid-state imaging element comprising a pixel including:

• a first imaging element;
• a first floating diffusion region electrically connected to the first imaging element;
• a second imaging element;
• a second floating diffusion region electrically connected to the second imaging element;
• a third imaging element;
• a third floating diffusion region electrically connected to the third imaging element;
• and
• an on-chip micro lens, wherein
• the first imaging element includes a first electrode, a third electrode, and a second electrode facing the first and third electrodes, and
• each of centers of the first to third floating diffusion layers is disposed outside an inscribed circle of the third electrode, outside an outline of the third electrode, or outside a circumscribed circle of the third electrode.

A solid-state imaging element comprising a pixel including:

• a first imaging element;
• a second imaging element;
• a first transfer transistor, a first reset transistor, and a first selection transistor electrically connected to the second imaging element;
• a third imaging element;
• a second transfer transistor, a second reset transistor, and a second selection transistor electrically connected to the third imaging element;
• and
• an on-chip micro lens, wherein
• the first imaging element includes a first electrode, a third electrode, and a second electrode facing the first and third electrodes, and
• a minimum channel length in the first and second transfer transistors, the first and second reset transistors, and the first and second selection transistors is shorter than a minimum distance between the third electrode and the first electrode.

A solid-state imaging device comprising a pixel including:

• a first imaging element;
• a second imaging element;
• a third imaging element;
• and
• an on-chip micro lens, wherein
• the first imaging element includes
• a first electrode, a third electrode, and a second electrode facing the first and third electrodes, and
• the third electrode has an area larger than the third imaging element.