Solid-state imaging device, method of manufacturing the same, and electronic device

A light detecting device comprising:

• a first photoelectric conversion region and a second photoelectric conversion region disposed in a semiconductor substrate, wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region;
• a groove portion disposed in the semiconductor substrate below a light receiving plane of the semiconductor substrate in a cross-sectional view, wherein the groove portion is disposed between the first photoelectric conversion region and the second photoelectric conversion region;
• a first film disposed above the light receiving plane, wherein the first film includes a hafnium oxide;
• and
• a second film covering an inner wall surface of the groove portion, wherein the second film includes one of an aluminum oxide, zirconium oxide, tantalum oxide, or titanium oxide.

A light detecting device comprising:

• a first photoelectric conversion region and a second photoelectric conversion region disposed in a semiconductor substrate, wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region;
• a groove portion disposed in the semiconductor substrate below a light receiving plane of the semiconductor substrate in a cross-sectional view, and wherein the groove portion is disposed between the first photoelectric conversion region and the second photoelectric conversion region in the cross-sectional view;
• a first film disposed above the light receiving plane, wherein the first film includes a hafnium oxide, wherein the first film comprises a first portion, a second portion, and a third portion, and wherein the second portion is disposed between the first portion and the third portion;
• and
• a second film covering an inner wall surface of the groove portion, wherein the second film includes one of an aluminum oxide, zirconium oxide, tantalum oxide, or titanium oxide.

An electronic device comprising:

• a light detecting device including:
• a semiconductor substrate;
• a first photoelectric conversion region and a second photoelectric conversion region disposed in the semiconductor substrate, wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region;
• a groove portion disposed in the semiconductor substrate below a light receiving plane of the semiconductor substrate in a cross-sectional view, and disposed between the first photoelectric conversion region and the second photoelectric conversion region in the cross-sectional view;
• a first film disposed above the light receiving plane, wherein the first film includes a hafnium oxide;
• and
• a second film covering an inner wall surface of the groove portion, wherein the second film includes one of an aluminum oxide, zirconium oxide, tantalum oxide, or titanium oxide.