Imaging device and camera system

An imaging device comprising:

• a pixel including
• a photoelectric converter including a pixel electrode, a counter electrode facing the pixel electrode, and a photoelectric conversion film between the counter electrode and the pixel electrode, the photoelectric conversion film converting light into a charge,
• a first transistor having a first source, a first drain, a first gate insulating film, and a first gate on the first gate insulating film, one of the first source and the first drain being connected to the pixel electrode, and
• a first capacitor that is connected to the other of the first source and the first drain and that is connected to the pixel electrode via the first transistor, the first capacitor including a first electrode, a second electrode facing the first electrode, and a dielectric layer between the first electrode and the second electrode, wherein
• an effective thickness of the dielectric layer is smaller than an effective thickness of the first gate insulting film.

An imaging device comprising:

• a pixel including
• a photoelectric converter including a pixel electrode, a counter electrode facing the pixel electrode, and a photoelectric conversion film between the counter electrode and the pixel electrode, the photoelectric conversion film converting light into a charge,
• a first transistor having a first source, a first drain, and a first gate, the first gate being connected to the pixel electrode, and
• a second transistor having a second source, a second drain, and a second gate, one of the second source and the second drain being connected to the pixel electrode, wherein
• the pixel includes
• a first line connected to the other of the second source and the second drain of the second transistor, a third voltage being applied to the first line,
• a second line adjacent to the first line, a fourth voltage different from the third voltage being applied to the second line,
• a third line connecting the pixel electrode and the first gate together, and
• a fourth line adjacent to the third line, and
• an interval between the first line and the second line is smaller than an interval between the third line and the fourth line.

An imaging device comprising:

• a pixel including
• a photoelectric converter including a pixel electrode, a counter electrode facing the pixel electrode, and a photoelectric conversion film between the counter electrode and the pixel electrode, the photoelectric conversion film converting light into a charge,
• a first transistor having a first source, a first drain, a first gate insulating film, and a first gate on the first gate insulating film, one of the first source and the first drain being connected to the pixel electrode, and
• a first capacitor that is connected to the other of the first source and the first drain and that is connected to the pixel electrode via the first transistor, the first capacitor including a first electrode, a second electrode facing the first electrode, and a dielectric layer between the first electrode and the second electrode, wherein
• a dielectric constant of the dielectric layer is greater than a dielectric constant of the first gate insulting film.