Semiconductor storage device

A method of performing an operation to read data or write data in a semiconductor storage device that includes:

• a stacked body in which a plurality of conductive layers are arranged to be spaced apart from each other in a stacking direction;
• a columnar body that penetrates the stacked body in the stacking direction, wherein the columnar body includes a columnar ferroelectric film, a semiconductor film disposed between the ferroelectric film and the conductive layers, and an insulating film disposed between the semiconductor film and the conductive layers, wherein a plurality of memory cells connected in series is formed along the columnar body where the conductive layers intersect the columnar body;
• a bit line connected to the columnar body;
• and
• a plate line connected to the columnar body,
• said method comprising:
• applying different voltages to the bit line and the plate line to write first or second data into one of the memory cells.

A method of performing an operation to read data or write data in a semiconductor storage device that includes:

• a stacked body in which a plurality of conductive layers are arranged to be spaced apart from each other in a stacking direction;
• a columnar body that penetrates the stacked body in the stacking direction, wherein the columnar body includes a columnar ferroelectric film, a semiconductor film disposed between the ferroelectric film and the conductive layers, and an insulating film disposed between the semiconductor film and the conductive layers, wherein a plurality of memory cells connected in series is formed along the columnar body where the conductive layers intersect the columnar body;
• a bit line connected to the columnar body;
• a plate line connected to the columnar body;
• and
• a sense amplifier connected the bit line,
• said method comprising:
• selecting one of the memory cells to read;
• disconnecting the bit line from the sense amplifier to place the bit line in a floating state;
• while the bit line is in the floating state, applying a first voltage to the plate line to raise a voltage of the bit line;
• after the voltage of the bit line has been raised, connecting the bit line to the sense amplifier and comparing the voltage of the bit line against a reference voltage;
• and
• determining that data read from the selected memory cell is first data if the voltage of the bit line is less than the reference voltage and second data if the voltage of the bit line is greater than the reference voltage.