Semiconductor memory device

A semiconductor memory device comprising:

• a stacked body including gate electrode layers stacked in a first direction;
• a semiconductor layer provided in the stacked body and extending in the first direction;
• and
• a gate insulating layer provided between the semiconductor layer and at least one of the gate electrode layers, and the gate insulating layer including a first region containing a first oxide including at least one of a hafnium oxide and a zirconium oxide, and the first oxide being a ferroelectric material,
• wherein a first length of the gate electrode layer in the first direction is larger than a second length of the first region in the first direction.

A semiconductor memory device comprising:

• a stacked body including gate electrode layers stacked in a first direction;
• a semiconductor layer provided in the stacked body and extending in the first direction;
• and
• a gate insulating layer provided between the semiconductor layer and at least one of the gate electrode layer, the gate insulating layer including a first region containing a first oxide including at least one of a hafnium oxide and a zirconium oxide, and main crystal structure of the first oxide being orthorhombic,
• wherein a first length of the at least one of the gate electrode layer in the first direction is larger than a second length of the first region in the first direction.