Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal-containing conductive elements and method of making thereof

A method of forming a three-dimensional ferroelectric memory device, comprising:

• forming an alternating stack of insulating layers and sacrificial material layers over a substrate;
• forming memory openings vertically extending through the alternating stack;
• forming a vertical semiconductor channel in each of the memory openings;
• forming backside recesses by removing the sacrificial material layers selective to the insulating layers;
• forming a vertical stack of tubular transition metal element-containing conductive spacers around each of the memory openings prior to or after formation of the vertical semiconductor channels, wherein each of the tubular transition metal element-containing conductive spacers laterally surrounds a respective one of the vertical semiconductor channels;
• forming a ferroelectric material layer in the backside recesses on the tubular transition metal element-containing conductive spacers;
• and
• forming electrically conductive layers in the backside recesses by forming a transition metal element-containing conductive liner on the ferroelectric material layer, and forming a conductive fill material portion over the transition metal element-containing conductive liner.