Semiconductor device and manufacturing method thereof
AssigneeKioxia Corporation
InventorsAtsushi Fukumoto, Keisuke Suda, Takayuki Ito
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Abstract
A semiconductor device according to one embodiment is provided with: a substrate; a stacked body provided on the substrate; and a pillar portion penetrating the stacked body. The pillar portion has a first film including a first material and a second material, and a second film provided on an inner side of the first film. The second material is a material that increases an etching rate of the first material as a composition rate relative to the first material is higher, and the composition rate gradually decreases from an upper part to a lower part of the first film.
Claims12
A semiconductor device comprising:
- a substrate;
- a stacked body provided on the substrate;
- and
- a pillar portion penetrating the stacked body, wherein
- the pillar portion comprises a first film including a first material and a second material, and a second film provided on an inner side of the first film;
- and
- the second material is a material that increases an etching rate of the first material as a composition rate relative to the first material increases, and the composition rate gradually decreases from an upper part to a lower part of the first film.
A semiconductor manufacturing method comprising:
- forming a groove or a hole in a stacked body provided on a substrate;
- forming a first film including a first material and a second material in the groove or the hole, a composition rate of the second material relative to the first material gradually decreasing from an upper part to a lower part of the first film;
- etching the upper part of the first film;
- and
- forming a second film on an inner side of the first film.
Dependencies are inferred from the claim text.