Semiconductor memory device

Abstract

A semiconductor memory device according to an embodiment includes: a first transistor, the first transistor including a substrate including a first region of first conductive type and a second region of first conductive type, a first insulating film provided on the first region and the second region, a first wiring of first conductive type provided on the first region, the first wiring being electrically connected to the first region, and the first wiring including a higher impurity concentration of first conductive type than an impurity concentration of the first region, and a second wiring of first conductive type provided on the second region, the second wiring being electrically connected to the second region, and the second wiring including a higher impurity concentration of first conductive type than an impurity concentration of the second region; a conductive layer provided parallel to a substrate plane above the first transistor; a pillar penetrating the conductive layer, the pillar including a semiconductor film; and a charge storage film provided between the semiconductor film and the conductive layer.

Dependencies are inferred from the claim text.