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US 2021/0082946 A1Published application
Semiconductor memory device
AssigneeKioxia Corporation
InventorYumi NAKAJIMA
Life of this patent
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Abstract
According to one embodiment, a semiconductor memory device includes a via provided above a substrate, a conductive layer provided on the via, and a via provided on the conductive layer. The via, the conductive layer, and the via are one continuous structure.
Claims20
A semiconductor memory device comprising:
- a first contact plug provided above a substrate;
- a first conductive layer provided on the first contact plug;
- and
- a second contact plug provided on the first conductive layer,
- wherein the first contact plug, the first conductive layer, and the second contact plug are one continuous structure.
2 more elements
A semiconductor memory device comprising:
- a first contact plug provided above a substrate;
- a first conductive layer provided on the first contact plug;
- and
- a second contact plug provided on the first conductive layer,
- wherein in a third direction perpendicular to a surface of the substrate, a first width of the first conductive layer at a first position is larger than a second width of the first conductive layer at a second position farther from the first contact plug than the first position of the first conductive layer.
2 more elements
Dependencies are inferred from the claim text.