Semiconductor memory device and method of manufacturing the same
AssigneeKioxia Corporation
InventorKyungmin Jang
Life of this patent
Estimating the term…
Abstract
According to an embodiment, a semiconductor memory device includes a semiconductor substrate, a control circuit arranged on the semiconductor substrate, and a memory cell array arranged above the control circuit. The memory cell array includes a plurality of three-dimensionally-arranged memory cells, and is controlled by the control circuit. A first nitride layer is arranged between the control circuit and the memory cell array, and a second nitride layer is arranged between the control circuit and the first nitride layer.
Claims18
A semiconductor memory device, comprising:
- a semiconductor substrate;
- a control circuit arranged on the semiconductor substrate;
- a memory cell array arranged above the control circuit, including a plurality of three-dimensionally-arranged memory cells, and controlled by the control circuit;
- a first nitride layer arranged between the control circuit and the memory cell array;
- and
- a second nitride layer arranged between the control circuit and the first nitride layer.
A semiconductor memory device, comprising:
- a semiconductor substrate;
- a transistor on the semiconductor substrate;
- a layer stack above the transistor, the layer stack including a plurality of conductive layers arranged at intervals in a first direction, a semiconductor layer that passes through the conductive layers in the first direction, and a charge storage layer between the semiconductor layer and the conductive layers;
- a first nitride layer between the transistor and the layer stack;
- and
- a second nitride layer between the transistor and the first nitride layer, the second nitride layer being different from the first nitride layer.
A method of manufacturing a semiconductor memory device, comprising:
- forming a transistor on a semiconductor substrate;
- forming a first nitride layer and a second nitride layer different from the first nitride layer above the transistor;
- and
- forming a layer stack above the first nitride layer and the second nitride layer, the layer stack including a plurality of conductive layers arranged at intervals in a first direction, a semiconductor layer that passes through the conductive layers in the first direction, and a charge storage layer between the semiconductor layer and the conductive layers.
Dependencies are inferred from the claim text.