Semiconductor memory device

A semiconductor memory device, comprising:

• a first conductive layer;
• a plurality of second conductive layers arranged at intervals in a first direction above the first conductive layer;
• a semiconductor layer extending in the first direction in the second conductive layers so as to be in contact with the first conductive layer;
• a charge storage layer between the semiconductor layer and the second conductive layers;
• an insulating layer extending in the first direction and a second direction intersecting the first direction in the second conductive layers, and separating each of the second conductive layers in a third direction intersecting the first direction and the second direction;
• and
• a metal layer extending in the first direction and the second direction in the insulating layer, wherein
• the insulating layer includes a first portion between the metal layer and the first conductive layer, and a second portion between the metal layer and the second conductive layers.

A semiconductor memory device, comprising:

• a first conductive layer;
• a plurality of second conductive layers arranged at intervals in a first direction above the first conductive layer;
• a first semiconductor layer extending in the first direction in the second conductive layers so as to be in contact with the first conductive layer;
• a first charge storage layer between the first semiconductor layer and the second conductive layers;
• a plurality of third conductive layers arranged at intervals in the first direction above the first conductive layer, the second conductive layers and the third conductive layers being arranged at intervals in a second direction intersecting the first direction,
• a second semiconductor layer extending in the first direction in the third conductive layers so as to be in contact with the first conductive layer;
• a second charge storage layer between the second semiconductor layer and the third conductive layers;
• a metal layer extending in the first direction and a third direction intersecting the first direction and the second direction, between the second conductive layers and the third conductive layers;
• an insulating layer including a first portion between the metal layer and the first conductive layer, a second portion between the metal layer and the second conductive layers, and a third portion between the metal layer and the third conductive layers.