Semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate;
• an active region provided on the semiconductor substrate;
• and
• a termination region provided in the semiconductor substrate, surrounding a periphery of the active region, wherein
• the active region includes:
• a first cell region in which a first insulated-gate-type bipolar transistor is disposed, and
• a second cell region disposed adjacent to the first cell region, wherein
• the second cell region includes:
• a first region in which a second insulated-gate-type bipolar transistor is disposed, the second insulated-gate-type bipolar transistor having an arithmetic area smaller than that of the first insulated-gate-type bipolar transistor, and
• a second region separating the first cell region from the first region, wherein
• the second region includes:
• a first gate electrode layer provided on the semiconductor substrate via an oxide film, and
• an emitter electrode of the second insulated-gate-type bipolar transistor, provided on the first gate electrode layer via an interlayer insulating film, wherein
• the termination region comprises a gate runner provided on the semiconductor substrate via the oxide film, the gate runner surrounding a periphery of the active region, and being electrically connected to a plurality of first gate electrodes of the first insulated-gate-type bipolar transistor, wherein
• the first gate electrode layer has:
• a first gate electrode layer portion electrically connected to a plurality of second gate electrodes of the second insulated-gate-type bipolar transistor, and
• a second gate electrode layer portion in the second region, having a planar shape in a plane parallel to a surface of the semiconductor substrate and extending from the first gate electrode layer portion to the gate runner, the second gate electrode layer portion electrically connecting the first gate electrode layer portion and the gate runner, and wherein
• the second gate electrode layer portion has a resistance value in a range from 10Ω to 5000Ω.