US 2021/0082909 A1Published application

Semiconductor apparatus and system

AssigneeSK hynix Inc.

InventorsJoong-Ho KIM, Hyun Woo KWACK, Ki Jong LEE, Doo Bock LEE

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Abstract

A semiconductor system includes a control device, and a semiconductor apparatus coupled with the control device through a first line and a second line. A loading of the second line is greater than a loading of the first line, wherein the semiconductor apparatus includes a first receiving circuit which is electrically coupled with the first line and a second receiving circuit which is electrically coupled with the second line. Further a loading between the first line and the first receiving circuit is greater than a loading between the second line and the second receiving circuit.

Claims15

Dependent claims

A semiconductor device comprising:

a first receiving circuit configured to be electrically coupled to an external device via a first external connection terminal;
a second receiving circuit configured to be electrically coupled to the external device via a second external connection terminal;
a first electrostatic discharge protection circuit configured to be connected between the first receiving circuit and the first external connection terminal;
a second electrostatic discharge protection circuit configured to be connected between the second receiving circuit and the second external connection terminal;
and
a load compensation circuit configured to compensate difference of loads between the external device and the external connection terminals;
wherein the load compensation circuit is connected to at least one of the first electrostatic discharge protection circuit and the second electrostatic discharge protection circuit and the load compensation circuit and the one of electrostatic discharge circuit are electrically parallel to each other.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/108,824Filed 1 Dec 2020
Priority: KR 10-2017-00717838 Jun 2017
Published: 18 Mar 2021
Term ends: Not estimatedThe source records don’t support an estimate.

Classification14 codes

H10D 89/931
For devices having insulated gate electrodes, e.g. for IGFETs or IGBTs: characterised by the dispositions of the protective arrangements
H02H 9/046
Adapted to a particular application and not provided for elsewhere: responsive to excess voltage appearing at terminals of integrated circuits
H10D 89/911
For devices having insulated gate electrodes, e.g. for IGFETs or IGBTs: using passive elements as protective elements
H10D 89/921
For devices having insulated gate electrodes, e.g. for IGFETs or IGBTs: characterised by the configuration of the interconnections connecting the…

Family

Application15/855,777Continuation · filed 27 Dec 2017
Application17/108,824Continuation
US 10,867,992 B2Related patent
US 11,380,676 B2Related patent
US 2018/0358355 A1Published application
US 2021/0082909 A1This patent

From the US filing history. Foreign family members aren’t listed.

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