Semiconductor storage device

A semiconductor storage device, comprising:

• a circuit region formed on a semiconductor substrate;
• and
• a guard ring region spaced from one side of the circuit region by a predetermined distance,
• wherein the guard ring region extends in a first direction, the first direction being a direction in which the one side of the circuit region extends, includes:
• a guard ring line,
• wherein the guard ring line includes a plurality of guard ring patterns over a surface of the semiconductor substrate, each of the plurality of guard ring patterns include a first line segment extending in the first direction, a second line segment extending from a first end of the first line segment in a second direction orthogonal to the first direction, and a third line segment extending from a second end of the first line segment in the second direction,
• wherein in a first one and a second one of the plurality of guard ring patterns adjacent to each other, the second line segment of the first guard ring pattern is connected to the third line segment of the second guard ring pattern by a fourth line segment extending in the second direction;
• an element isolation region, formed between the circuit region and the guard ring line, that extends into the semiconductor substrate to a first depth;
• a first defect trapping layer, which is a highly distorted layer, formed below the element isolation region;
• and
• a second defect trapping layer, which is a highly distorted layer, formed along a boundary between the element isolation region and the circuit region, the second defect trapping layer extending into the semiconductor substrate to a second depth equal to the first depth, wherein
• the first defect trapping layer extends from a boundary location between the circuit region and the element isolation region to a location spaced from a boundary location between the element isolation region and the guard ring line by an offset distance toward the element isolation region in the second direction.