Semiconductor device including source/drain contact having height below gate stack

A semiconductor structure, comprising:

• a first gate structure and a second gate structure that extend continuously across a non-active region from a first active region to a second active region;
• at least one local interconnect disposed over the non-active region;
• a first separation spacer disposed on the first gate structure;
• and
• a plurality of first vias arranged on the first gate structure, wherein the plurality of first vias are disposed on opposite sides of the first separation spacer and electrically isolated from each other.

A semiconductor structure, comprising:

• a plurality of gate structures extending continuously across a non-active region;
• a plurality of first contacts and a plurality of second contacts, wherein the plurality of first contacts and the plurality of second contacts are separated by the non-active region;
• at least one local interconnect disposed between adjacent two gate structures in the plurality of gate structures, wherein the at least one local interconnect is electrically coupled with one of the plurality of first contacts and one of the plurality of second contacts;
• and
• a plurality of separation spacers disposed on the plurality of gate structures, wherein the plurality of separation spacers overlap the non-active region and the at least one local interconnect in a layout view.