Graphene Barrier Layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShin-Yi Yang, Ming-Han Lee, Shau-Lin Shue
Life of this patent
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Abstract
Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a third dielectric layer over the second dielectric layer, a second contact feature extending through the second dielectric layer and the third dielectric layer, and a graphene layer between the second contact feature and the third dielectric layer.
Claims21
An interconnect structure comprising:
- a first contact feature in a first dielectric layer;
- a second dielectric layer over the first dielectric layer;
- a third dielectric layer over the second dielectric layer;
- a second contact feature extending through the second dielectric layer and the third dielectric layer;
- and
- a graphene layer between the second contact feature and the third dielectric layer.
An interconnect structure comprising:
- a first contact feature in a first dielectric layer;
- an etch stop layer over the first dielectric layer;
- a second dielectric layer over the etch stop layer;
- a second contact feature extending through the second dielectric layer and electrically coupled to the first contact feature;
- and
- a carbon layer between and in contact with the second contact feature and the first contact feature.
15-20. (canceled)
An interconnect structure comprising:
- a first contact feature in a first dielectric layer;
- an etch stop layer over the first dielectric layer;
- a second dielectric layer over the etch stop layer;
- a third dielectric layer over the second dielectric layer;
- a second contact feature extending through the third dielectric layer, the second dielectric layer, and the etch stop layer and electrically coupled to the first contact feature;
- and
- a carbon layer between and in contact with the second contact feature and the third dielectric layer.
Dependencies are inferred from the claim text.