Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Cheng Ho, Chun-Chieh Lu, Chih-Sheng Chang
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Abstract
A semiconductor device includes a semiconductor substrate, a gate structure, a capacitor structure, and a conductive contact. The semiconductor substrate has at least one semiconductor fin thereon. The gate structure is disposed across the semiconductor fin. The capacitor structure is disposed on the gate structure. The capacitor structure includes a ferroelectric layer and a first metal layer disposed on the ferroelectric layer. The capacitor structure is sandwiched between the conductive contact and the gate structure.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate having at least one semiconductor fin thereon;
- a gate structure disposed across the at least one semiconductor fin;
- a capacitor structure disposed on the gate structure, comprising:
- a ferroelectric layer;
- and
- a first metal layer disposed on the ferroelectric layer;
- a conductive contact, wherein the capacitor structure is sandwiched between the conductive contact and the gate structure.
A method of manufacturing a semiconductor device, comprising:
- patterning a semiconductor substrate to form a plurality of trenches in the semiconductor substrate and at least one semiconductor fin between the plurality of trenches;
- forming a plurality of insulators in the plurality of trenches;
- forming a dummy gate structure across the at least one semiconductor fin;
- forming a plurality of strained material structures over portions of the at least one semiconductor fin revealed by the dummy gate structure;
- removing the dummy gate structure to form a hollow portion;
- forming a gate structure in the hollow portion;
- removing a portion of the gate structure to form a cavity;
- forming a capacitor structure over the gate structure, comprising:
- forming a ferroelectric layer in the cavity;
- and
- depositing a first metal layer over the ferroelectric layer;
- forming a hard mask layer over the capacitor structure to seal the cavity;
- and
- forming a conductive contact penetrating through the hard mask layer.
A method of manufacturing a semiconductor device, comprising:
- patterning a semiconductor substrate to form at least one semiconductor fin;
- forming a pair of spacers across the at least one semiconductor fin;
- forming a gate structure between the pair of spacers;
- forming a hard mask layer on the gate structure and between the pair of spacers;
- sequentially forming an etch stop layer and an interlayer dielectric layer over the hard mask layer and the pair of spacers;
- removing a portion of the hard mask layer, a portion of the etch stop layer, and a portion of the interlayer dielectric layer to form an opening, wherein the opening exposes a top surface of the gate structure;
- forming a capacitor structure over the gate structure, comprising:
- forming a ferroelectric layer in the opening;
- and
- depositing a first metal layer over the ferroelectric layer;
- and
- filling the opening with a conductive material to form a conductive contact.
Dependencies are inferred from the claim text.