Novel etching method for forming micro silicon pattern in semiconductor manufacturing process

A method of forming a silicon or silicon compound pattern in an etching process of a silicon or silicon compound layer in a semiconductor-manufacturing process, the method comprising:

• i) sequentially layering an organic film and an inorganic film on an object to be etched, applying a photoresist for pattern formation thereon, and performing exposure and developing, thus forming a photoresist pattern;
• ii) performing dry etching with a gas that is capable of being used for etching using the formed photoresist pattern so that a portion of an organic carbon film remains directly on the object to be etched;
• iii) applying a hydrofluoric-acid-resistant material on a remaining pattern of the organic carbon film;
• and
• iv) performing wet etching using an aqueous solution containing hydrofluoric acid.