Semiconductor memory device and method of manufacturing semiconductor memory device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsKaoru Hama, Junji Takahashi
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Abstract
According to one embodiment, a semiconductor memory device includes a MOS transistor and a drive circuit. The MOS transistor has a gate and a gate insulating film. The drive circuit is coupled to the gate and supplies a first voltage that destroys the gate insulating film or a second voltage lower than the first voltage. The drive circuit applies the first voltage to the gate in a first write to the MOS transistor, and applies the second voltage to the gate in a second write to the MOS transistor.
Claims18
A semiconductor memory device, comprising:
- a MOS transistor having a gate and a gate insulating film;
- and
- a drive circuit coupled to the gate and configured to supply a first voltage that destroys the gate insulating film or a second voltage lower than the first voltage;
- wherein the drive circuit
- applies the first voltage to the gate in a first write to the MOS transistor, and
- applies the second voltage to the gate in a second write to the MOS transistor.
A method of manufacturing a semiconductor memory device, wherein
- in a MOS transistor having a gate and a gate insulating film, a first voltage that destroys the gate insulating film is applied to the gate,
- after applying the first voltage, a second voltage lower than the first voltage is applied to the gate, and
- in at least one of the application of the first voltage and the application of the second voltage, the gate is irradiated with light having a wavelength corresponding to a material of the gate.
A semiconductor memory device, comprising:
- a plurality of MOS transistors having a gate and a gate insulating film;
- and
- a drive circuit coupled to the gate and configured to supply a first voltage that destroys the gate insulating film or a second voltage lower than the first voltage;
- wherein the drive circuit applies the first voltage to the gate in a first write to the MOS transistor, and applies the second voltage to the gate in a second write to the MOS transistor,
- a MOS transistor which has been applied with the first voltage among a plurality of the MOS transistors has a region relating to a conductive path formed by destruction of the gate insulating film, and
- a MOS transistor which has been applied with the second voltage after the application of the first voltage among a plurality of the MOS transistors has a fused region formed by fusing a conductive path formed by destruction of the gate insulating film.
Dependencies are inferred from the claim text.