Magnetic memory
AssigneeKioxia Corporation
InventorsYoshihiro UEDA, Michael ARNAUD QUINSAT
Life of this patent
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Abstract
A magnetic memory according to an embodiment includes: a first wiring; a second wiring; a first switching element disposed between the first wiring and the second wiring; a first magnetic member extending in a first direction and disposed between the first switching element and the second wiring; a third wiring disposed between the first magnetic member and the second wiring; a first magnetoresistive element disposed between the third wiring and the second wiring; and a second switching element disposed between the first magnetoresistive element and the second wiring.
Claims21
A magnetic memory comprising:
- a first wiring;
- a second wiring;
- a first switching element disposed between the first wiring and the second wiring;
- a first magnetic member extending in a first direction and disposed between the first switching element and the second wiring;
- a third wiring disposed between the first magnetic member and the second wiring;
- a first magnetoresistive element disposed between the third wiring and the second wiring;
- and
- a second switching element disposed between the first magnetoresistive element and the second wiring.
A magnetic memory comprising:
- a first wiring;
- a second wiring;
- a first switching element disposed between the first wiring and the second wiring;
- a first magnetic member disposed between the first switching element and the second wiring;
- a third wiring disposed between the first magnetic member and the second wiring;
- a first magnetoresistive element disposed between the third wiring and the second wiring;
- a second switching element disposed between the first magnetoresistive element and the second wiring;
- and
- a control circuit electrically connected to the first wiring, the second wiring, and the third wiring, the control circuit applying a first voltage to the first wiring, a second voltage that is different from the first voltage to the third wiring, and a third voltage between the first voltage and the second voltage to the second wiring to shift a domain wall of the first magnetic member, and applying a fourth voltage to the second wiring, a fifth voltage that is different from the fourth voltage to the third wiring, and a sixth voltage between the fourth voltage and the fifth voltage to the first wiring to read data from the first magnetoresistive element.
A magnetic memory comprising:
- a first wiring;
- a second wiring;
- a third wiring;
- a first switching element including a first terminal and a second terminal, the first terminal being electrically connected to the first wiring;
- a first magnetic member extending in a first direction and including a first end portion and a second end portion, the first end portion being electrically connected to the second terminal, and the second end portion being electrically connected to one of two opposing surfaces of the third wiring;
- a first magnetoresistive element including a third terminal and a fourth terminal, the third terminal being electrically connected to another of the two opposing surfaces of the third wiring;
- and
- a second switching element including a fifth terminal and a six terminal, the fifth terminal being electrically connected to the fourth terminal, and the six terminal being electrically connected to the second wiring.
Dependencies are inferred from the claim text.