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US 2021/0074815 A1Published application
Semiconductor device including graphene and method of manufacturing the semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsKeunwook SHIN, Hyeonjin SHIN, Yeonchoo CHO, Seunggeol NAM, Seongjun PARK, Yunseong LEE
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Abstract
Provided is a semiconductor device including graphene. The semiconductor device includes: a substrate including an insulator and a semiconductor; and a graphene layer configured to directly grow only on a surface of the semiconductor, wherein the semiconductor includes at least one of a group IV material and a group III-V compound.
Claims15
A semiconductor device comprising:
- a substrate including an insulator and a semiconductor;
- and
- a graphene layer configured to directly grow only on a surface of the semiconductor,
- wherein the semiconductor includes at least one of a group IV material and a group III-V compound.
1 more element
A semiconductor device comprising:
- a substrate including an insulator and a semiconductor;
- a first graphene layer configured to directly grow only on a surface of the semiconductor;
- and
- a second graphene layer configured to directly grow only on a surface of the insulator,
- wherein a thickness of the first graphene layer is greater than a thickness of the second graphene layer.
2 more elements
Dependencies are inferred from the claim text.