Crystal cutting method, method of manufacturing sic semiconductor device, and sic semiconductor device
AssigneeRohm Co., Ltd.
InventorsKazunori FUJI, Hironobu KAWAUCHI
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Abstract
A crystal cutting method includes a step of preparing a crystal structure body constituted of a hexagonal crystal, a first cutting step of cutting the crystal structure body along a [1-100] direction of the hexagonal crystal and forming a first cut portion in the crystal structure body and a second cutting step of cutting the crystal structure body along a [11-20] direction of the hexagonal crystal and forming a second cut portion crossing the first cut portion in the crystal structure body.
Claims23
A crystal cutting method comprising:
- a step of preparing a crystal structure body constituted of a hexagonal crystal;
- a first cutting step of cutting the crystal structure body along a [1-100] direction of the hexagonal crystal and forming a first cut portion in the crystal structure body;
- and
- a second cutting step of cutting the crystal structure body along a [11-20] direction of the hexagonal crystal and forming a second cut portion crossing the first cut portion in the crystal structure body.
A crystal cutting method comprising:
- a step of preparing an SiC crystal structure body constituted of a hexagonal crystal;
- a first cutting step of cutting the SiC crystal structure body along a [1-100] direction of the hexagonal crystal and forming a first cut portion in the SiC crystal structure body;
- and
- a second cutting step of cutting the SiC crystal structure body along a [11-20] direction of the hexagonal crystal and forming a second cut portion crossing the first cut portion in the SiC crystal structure body.
(canceled)
A method for manufacturing an SiC semiconductor device comprising:
- a step of preparing an SiC crystal structure body constituted of a hexagonal crystal;
- a step of setting a device region of quadrilateral shape having a [1-100] direction side oriented along a [1-100] direction of the hexagonal crystal, and a [11-20] direction side oriented along a [11-20] direction of the hexagonal crystal in the SiC crystal structure body, and forming a functional device in the device region;
- a first cutting step of cutting the SiC crystal structure body along the [1-100] direction side of the device region and forming a first cut portion in the SiC crystal structure body;
- and
- a second cutting step of cutting the SiC crystal structure body along the [11-20] direction side of the device region and forming a second cut portion crossing the first cut portion in the SiC crystal structure body.
(canceled)
23-31. (canceled)
Dependencies are inferred from the claim text.