Light emitting device and manufacturing method thereof

A light emitting device, comprising:

• a lower electrode;
• an upper electrode disposed to face the lower electrode;
• a quantum dot light emitting layer between the lower electrode and the upper electrode;
• an electron transport layer between the lower electrode and the quantum dot light emitting layer;
• and
• a hole transport layer between the upper electrode and the quantum dot light emitting layer,
• wherein the quantum dot light emitting layer comprises a quantum dot, a first ligand on a surface of the quantum dot, and a second ligand on the surface of the quantum dot,
• the first ligand is adjacent to the electron transport layer,
• the first ligand is an organic compound having a chain structure,
• the second ligand is adjacent to the hole transport layer,
• the second ligand is an organic compound having a ring structure, and
• a length of the second ligand is shorter than a length of the first ligand.