Nitride semiconductor light-emitting element

Abstract

A nitride semiconductor light emitting element includes a multi-quantum well layer including AlGaN, and including a plurality of well layers and producing light by combining carriers and emitting deep ultraviolet light with a central wavelength of 250 nm to 350 nm, a metal electrode part including Al that is located above the multi-quantum well layer and reflects a first light that is a part of the light produced by the multi-quantum well layer and travels upward, a multi-stacked semiconductor layer that is located between the multi-quantum well layer and the metal electrode part, includes a plurality of p-type semiconductor layers including p-type AlGaN, and is configured in such a manner that the first light travels out and back therewithin via reflection at the metal electrode part until meeting a second light that is a part of the light produced by the multi-quantum well layer and travels downward, and an ITO contact electrode part provided between the metal electrode part and the multi-quantum well layer, and including an indium tin oxide, wherein a difference in refractive index between a p-type semiconductor layer and a layer adjacent thereto in the multi-stacked semiconductor layer is not more than 0.12, wherein the multi-stacked semiconductor layer and the ITO contact electrode part have a film thickness that allows only the first light after traveling out and back within the multi-stacked semiconductor layer and the ITO contact electrode part via the reflection at the metal electrode part, and the second light to meet in the same phase and exit from a lower side of the multi-quantum well layer.

Dependencies are inferred from the claim text.