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US 2021/0066545 A1Published application
Strained algainp layers for efficient electron and hole blocking in light emitting devices
AssigneeLumileds LLC
InventorsLekhnath BHUSAL, Theodore CHUNG, Parijat DEB
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Abstract
A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, wherein at least a portion of the electron blocking layer is arranged to have a tensile strain, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.
Claims23
A light-emitting device, comprising:
- an electron blocking layer, comprising a first AlGaInP material;
- a hole blocking layer, comprising a second AlGaInP material with a composition represented as (AlxGa(1-x))1-yInyP, where 0.4≤x≤1 and 0.49≤y≤0.7, and a greater ratio of indium than a ratio of indium in the first AlGaInP layer;
- and
- an active layer between the hole blocking layer and the electron blocking layer.
1 more element
(canceled)
(canceled)
A light-emitting device, comprising:
- an electron blocking layer;
- a hole blocking layer including a first unstrained n-type layer comprising a first AlGaInP material and a second n-type layer comprising a second AlGaInP material that has a greater indium ratio that the first AlGaInP material;
- and
- an active layer formed between the hole blocking layer and the electron blocking layer.
1 more element
(canceled)
A light-emitting device, comprising:
- an electron blocking layer comprising a first AlGaInP material, at least a portion of the electron blocking layer having a tensile strain;
- a hole blocking layer comprising a second AlGaInP material that has a greater indium ratio than the first AlGaInP material, at least a portion of the hole blocking layer having a compressive strain;
- and
- an active layer between the hole blocking layer and the electron blocking layer.
1 more element
Dependencies are inferred from the claim text.