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US 2021/0066528 A1Published application
Avalanche photodiode and method of manufacturing the same
AssigneeNippon Telegraph and Telephone Corporation
InventorsMasahiro NADA, Hideaki MATSUZAKI
Life of this patent
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Abstract
An n-type semiconductor layer (102), a multiplication layer (103), an electric field control layer (104), a light absorption layer (105), and a p-type semiconductor layer (106) are formed on a growth substrate (101), and the p-type semiconductor layer (106) is adhered on a transfer substrate (107). After that, the growth substrate (101) is removed, and the n-type semiconductor layer (102) is processed to have an area smaller than that of the multiplication layer (103).
Claims20
A method of manufacturing an avalanche photodiode including:
- a p-type semiconductor layer formed on a transfer substrate and made of a p-type semiconductor;
- a light absorption layer formed on the p-type semiconductor layer and made of germanium;
- an electric field control layer formed on the light absorption layer and made of a p-type semiconductor;
- a multiplication layer formed on the electric field control layer and made of silicon;
- and
- an n-type semiconductor layer formed on the multiplication layer and made of n-type silicon,
- the method comprising:
- a first step of forming the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer on a growth substrate;
- a second step of transferring the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer formed on the growth substrate to the transfer substrate;
- and
- a third step of processing the n-type semiconductor layer to have an area smaller than that of the multiplication layer, after the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer are transferred to the transfer substrate.
8 more elements
An avalanche photodiode comprising:
- a p-type semiconductor layer formed on a substrate and made of a p-type semiconductor;
- a light absorption layer formed on the p-type semiconductor layer and made of germanium;
- an electric field control layer formed on the light absorption layer and made of a p-type semiconductor;
- a multiplication layer formed on the electric field control layer and made of silicon;
- and
- an n-type semiconductor layer formed on the multiplication layer, made of n-type silicon, and having an area smaller than that of the multiplication layer.
3 more elements
Dependencies are inferred from the claim text.