Semiconductor device

A semiconductor device comprising:

• an active region that includes a plurality of first P-pillars and first N-pillars formed between the plurality of first P-pillars;
• a frame region that includes an upper frame region that extends in a first direction while having a P-type of conductivity and
• a lower frame region that is formed below the upper frame region, and includes a plurality of second P-pillars and second N-pillars formed between the plurality of second P-pillars;
• and
• a termination region that includes an upper termination region that extends in the first direction while having the P-type of conductivity,
• a middle termination region that has an N-type of conductivity and is formed below the upper termination region, and
• a lower termination region that includes a plurality of third P-pillars and N-pillars formed between the plurality of third P-pillars and is formed below the middle termination region,
• wherein the plurality of third P-pillars in the lower termination region are covered by the upper termination region.

A semiconductor device comprising:

• an active region that includes a plurality of first P-pillars and first N-pillars formed between the plurality of first P-pillars;
• a frame region that includes an upper frame region that extends in a first direction while having a P-type of conductivity and
• a lower frame region that includes a plurality of second P-pillars and second N-pillars formed between the plurality of second P-pillars, and is formed below the upper frame region;
• and
• a termination region that includes an upper termination region that extends in the first direction while having the P-type of conductivity,
• a middle termination region that has an N-type of conductivity and is formed below the upper termination region, and
• a lower termination region that includes a plurality of third P-pillars and N-pillars formed between the plurality of third P-pillars and is formed below the middle termination region,
• wherein at least a part of the plurality of third P-pillars of the lower termination region is covered by the upper termination region, and at least another part of the plurality of third P-pillars is not covered by the upper termination region.