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US 2021/0066492 A1Published application
Semiconductor device and method of formation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChin-Yi HUANG, Wade SHIH
Life of this patent
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Abstract
A semiconductor device includes a channel region between a source region and a drain region, a gate over the channel region, a dielectric layer over the gate, a capacitive field plate over the dielectric layer, and a word line electrically coupled to the capacitive field plate.
Claims20
A semiconductor device, comprising:
- a transistor, comprising:
- a first source/drain region;
- a second source/drain region;
- a channel region between the first source/drain region and the second source/drain region;
- and
- a gate electrode over the channel region;
- a dielectric layer over the gate electrode;
- a capacitive field plate over the dielectric layer;
- and
- a word line electrically coupled to the capacitive field plate.
7 more elements
A method of forming a semiconductor device, comprising:
- forming a first dielectric layer over a gate electrode and a first source/drain region of a transistor;
- removing a first portion of the first dielectric layer over the first source/drain region to expose a first portion of the first source/drain region;
- forming a capacitive field plate over the first dielectric layer after removing the first portion of the first dielectric layer;
- and
- coupling a word line to the capacitive field plate.
2 more elements
A semiconductor device, comprising:
- a transistor comprising:
- a first source/drain region coupled to a source line;
- a second source/drain region;
- a channel region between the first source/drain region and the second source/drain region;
- and
- a gate electrode over the channel region;
- a capacitive field plate overlying the gate electrode;
- and
- a word line coupled to and overlying the gate electrode.
6 more elements
Dependencies are inferred from the claim text.